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| Infrared Emitting Diodes(GaAs) KEL-3001A DIMENSIONS The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. (Unit : mm) FEATURES * 940nm wavelength * Low forward voltage * High power and high reliability * Available for pulse operating APPLICATIONS * IR Audio and Telephone * Communication * Optical Switch * Available for wireless digital data transmission ABSOLUTE MAXIMUM RATINGS Item Power dissipation Forward current Pulse forward current *1 Reverse voltage Operating temp. Storage temp. Soldering temp. *2 (Ta=25C) Symbol PD IF IFP VR Topr. Tstg. Tsol. Ratings 75 50 0.5 5 -25 ~ +85 -30 ~ +85 240 Unit mW mA A V C C C *1. Duty ratio=1/100, pulse width=0.1ms *2. Lead Soldering Temperature (3mm from case for 5sec). ELECTRO-OPTICAL CHARACTERISTICS Item Symbol Forward voltage VF Reverse current IR Capacitance Ct Radiant intensity Po Peak emission wavelength Spectral bandwidth 50% Half angle p (Ta=25C) Conditions IF=50mA VR=5V f=1MHz, V=0V IF=50mA IF=50mA IF=50mA IF=50mA Min. 5.0 Typ. 1.4 70 8.0 940 45 20 Max. 1.7 10 Unit V uA pF mW nm nm deg. Infrared Emitting Diodes(GaAs) KEL-3001A Power dissipation Vs. Ambient temperature 125 1000 Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature 100 Ta=25C 100 Relative radiant intensity Po 1 10 100 1000 10000 Power dissipation PD [mW] Radiant intensity Po [mW] 10 100 75 1 50 10 0.1 25 0 0 25 50 75 100 1 0.01 -20 0 20 40 60 80 100 Ambient temperature Ta [C] Forward current IF [mA] Ambient temperature Ta [C] Relative intensity Vs. Wavelength 120 125 Forward current Vs. Forward voltage Radiant Pattern Angle (deg.) Ta=25C Ta=25C Ta=25C 100 80 Forward current IF [mA] 400 500 600 700 800 900 1000 1100 100 Relative intensity [%] 75 60 50 40 20 25 0 0 0 0.5 1 1.5 2 2.5 Wavelength [nm] Forward voltage VF [V] Relative intensity (%) Relative radiant intensity Vs. Distance 1000 Relative radiant intensity Vs. Distance test method Ta=25C Relative radiant intensity Po [%] 100 10 IF=50mA 1 l Detector 0.1 0.1 1 10 100 1000 Distance l [mA] |
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